hf ssb applications rf & microwave transistors .500 4 lfl (m174) epoxy sealed . optimized for ssb . 30 mhz . 28 volts . imd - 30db . efficiency 40% . common emitter . gold metallization . p out = 220 w pep with 12 db gain description the sd1730 is a 28 v epitaxial silicon npn planar transistor designed primarily for ssb and vhf communications. the devices utlizes emitter bal- lasting for improved ruggedness and reliability. pin connection branding TH560 order code sd1730 absolute maximum ratings (t case = 25 c) symbol parameter value unit v cbo collector-base voltage 70 v v ceo collector-emitter voltage 35 v v ebo emitter-base voltage 4.0 v i c device current 16 a p diss power dissipation 320 w t j junction temperature +200 c t stg storage temperature - 65 to +150 c r th(j-c) junction-case thermal resistance 0.6 c/w sd1730 (TH560) 1. collector 3. base 2. emitter 4. emitter thermal data september 7, 1994 1/6
electrical specifications (t case = 25 c) symbol test conditions value unit min. typ. max. p out f = 30 mhz v ce = 28 v i cq = 750 ma 220 e e w p g *p out = 220 w pep v ce = 28 v i cq = 750 ma 12 e e db imd* p out = 220 w pep v ce = 28 v i cq = 750 ma e e - 30 dbc h c* p out = 220 w pep v ce = 28 v i cq = 750 ma 40 e e % c ob f = 1 mhz v cb = 28 v e 450 e pf load mismatch p out = 220 w pep v ce = 28 v i cq = 750 ma e :1 e vswr note: * f 1 = 30.00 mhz, f 2 = 30.001 mhz static symbol test conditions value unit min. typ. max. bv ces i c = 100 ma v be = 0 v 70 e e v bv ceo i c = 200 ma i b = 0ma 35 e e v bv ebo i e = 20 ma i c = 0ma 4.0 e e v i ceo v ce = 30 v i e = 0ma e e 5 ma i ces v ce = 35 v i e = 0ma e e 5 ma h fe v ce = 5v i c = 7a 15 e 60 e dynamic typical performance power output pep vs power input collector efficiency vs power output pep sd1730 (TH560) 2/6
typical performance (cont'd) intermodulation distortion vs power output pep power gain vs power output freq. z in ( w )z cl ( w ) 30 mhz 1.15 + j 0.41 1.25 + j 1.92 impedance data sd1730 (TH560) 3/6
c1 : 180pf c2, c4, c6, c8, c10, c12 c14, c16 : arco 428 c3 : 820pf c5, c13 : 680pf c7, c11 : 1.2nf c9 : 1.5nf c17, c22 : 470 m f, 40v c18 : 10nf c19, c21 c23 : 1nf c20, c24 : 100nf, 63v l1 : 3 turns, diameter 10mm, 1.3mm wire, length 10mm l2, l5 : hair pin copper foil 40 x 5mm, 0.2mm thick l3, l4 : hair pin copper foil 10 x 5mm, 0.2mm thick l6 : 5 turns, diameter 10mm, 1.3mm wire, length 15mm l7 : 3 turns, diameter 10mm, 1.3mm wire, length 25mm l8 : choke l9 : choke l10 : choke test circuit sd1730 (TH560) 4/6
bias circuit sd1730 (TH560) 5/6
package mechanical data ref.: dwg. no.12-0174 rev. a information furnished is believed to be accurate and reliable. however, sgs-thomson microelectronics assumes no responsibili ty for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of sgs-thomson microelectron- ics. specifications mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. sgs-thomson microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of sgs-thomson microelectronics. ? 1994 sgs-thomson microelectronics - all rights reserved sgs-thomson microelectronics group of companies australia - brazil - france - germany - hong kong - italy - japan - korea - malaysia - malta - morocco - the netherlands - singapore - spain - sweden - switzerland - taiwan - thailand - united kingdom - u.s.a. sd1730 (TH560) 6/6
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